Pangrác, Jiří: search on Z-Library

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1

GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

Hospodková, Alice, Vyskočil, Jan, Zíková, Markéta, Oswald, Jiří, Pangrác, Jiří, Petříček, Otto

Journal:

Materials Research Express

Year:

2017

Language:

english

File:

PDF, 2.80 MB

english, 2017

2

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds

Stehlik, Stepan, Varga, Marian, Štenclová, Pavla, Ondič, Lukáš, Ledinsky, Martin, Pangrác, Jiří, Vanek, Ondrej, Lipov, Jan, Kromka, Alexander, Rezek, Bohuslav

Journal:

ACS Applied Materials & Interfaces

Year:

2017

Language:

english

File:

PDF, 7.00 MB

english, 2017

3

SPIE Proceedings [SPIE SPIE Optics + Optoelectronics - Prague, Czech Republic (Monday 15 April 2013)] Integrated Optics: Physics and Simulations - Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

Mikhailova, M., Zegrya, G., Danilov, L., Ivanov, E., Kalinina, K., Stoyanov, N., Salikhov, Kh., Yakovlev, Yu., Hulicius, E., Hospodkova, A., Pangrac, J., Zikova, M., Cheben, Pavel, Čtyroký, Jiří, Moli

Year:

2013

Language:

english

File:

PDF, 800 KB

english, 2013

4

Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Konstantin Moiseev, Eduard Ivanov, Vyacheslav Romanov, Maya Mikhailova, Yury Yakovlev, Eduard Hulicius, Alica Hospodková, Jiri Pangrác, Tomislav Šimeček

Journal:

Physics Procedia

Year:

2010

Language:

english

File:

PDF, 294 KB

english, 2010

5

Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode

František Dubecký, Eduard Hulicius, Paola Frigeri, Andrea Perd’ochová-Šagátová, Bohumír Zat’ko, Pavel Hubíkb, Enos Gombia, Pavel Boháček, Jiří Pangrác, Secondo Franchi, Vladimír Nečas

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2006

Language:

english

File:

PDF, 185 KB

english, 2006

6

Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony

Morávek, Pavel, Fulem, Michal, Pangrác, Jiří, Hulicius, Eduard, Růžička, Květoslav

Journal:

Fluid Phase Equilibria

Year:

2013

Language:

english

File:

PDF, 511 KB

english, 2013

7

Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures

Eduard Hulicius, Jiří Oswald, Jiří Pangrác, Jan Vyskočil, Alice Hospodková, Karla Kuldová, Karel Melichar, Tomislav Šimeček

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 791 KB

english, 2008

8

Triangles in random graphs

Martin Loebl, Jiří Matoušek, Ondřej Pangrác

Journal:

Discrete Mathematics

Year:

2004

Language:

english

File:

PDF, 156 KB

english, 2004

9

Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

Dominec, Filip, Hospodková, Alice, Hubáček, Tomáš, Zíková, Markéta, Pangrác, Jiří, Kuldová, Karla, Vetushka, Aliaksei, Hulicius, Eduard

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 910 KB

english, 2018

10

Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Hospodková, Alice, Pangrác, Jiří, Vyskočil, Jan, Zíková, Markéta, Oswald, Jiří, Komninou, Philomela, Hulicius, Eduard

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 1.49 MB

english, 2015

11

Comparison of MOVPE Grown GaAs, InGaAs and GaAsSb Covering Layers for Different InAs/GaAs Quantum Dot Applications

Zíková, Markéta, Hospodková, Alice, Pangrác, Jiří, Oswald, Jiří, Hulicius, Eduard

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.27 MB

english, 2016

12

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

Hospodková, Alice, Hubáček, Tomáš, Oswald, Jiří, Pangrác, Jiří, Kuldová, Karla, Hývl, Matěj, Dominec, Filip, Ledoux, Gilles, Dujardin, Christophe

Journal:

physica status solidi (b)

Year:

2017

Language:

english

File:

PDF, 1.11 MB

english, 2017

13

Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

Jan Vaniš, Jiří Zelinka, Václav Malina, Mohamed Henini, Jiří Pangrác, Karel Melichar, Eduard Hulicius, Filip Šroubek, Jarmila Walachová

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 230 KB

english, 2009

14

Vapor Pressures of (3-(Dimethylamino)propyl)dimethylindium, ( tert -Butylimino)bis(diethylamino)cyclopentadienyltantalum, and ( tert -Butylimino)tris(ethylmethylamino)tantalum

Morávek, Pavel, Pangrác, Jiří, Fulem, Michal, Hulicius, Eduard, Růžička, Květoslav

Journal:

Journal of Chemical & Engineering Data

Year:

2014

Language:

english

File:

PDF, 325 KB

english, 2014

15

Vapor Pressure of Di- tert -butylsilane

Fulem, Michal, Růžička, Květoslav, Růžička, Vlastimil, Šimeček, Tomislav, Hulicius, Eduard, Pangrác, Jiří, Becker, Jutta, Koch, Jörg, Salzmann, Andreas

Journal:

Journal of Chemical & Engineering Data

Year:

2005

Language:

english

File:

PDF, 175 KB

english, 2005

16

Optical characterization of MOVPE grown δ-InAs layers in GaAs

Pavel Hazdra, Jan Voves, Eduard Hulicius, Jiří Pangrác

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 197 KB

english, 2005

17

Epitaxial growth on porous GaAs substrates

Grym, Jan, Nohavica, Dušan, Gladkov, Petar, Hulicius, Eduard, Pangrác, Jiří, Piksová, Kateřina

Journal:

Comptes Rendus Chimie

Year:

2013

Language:

english

File:

PDF, 1.69 MB

english, 2013

18

GaAsSb/InAs/(In)GaAs Type II Quantum Dots for Solar Cell Applications

Vyskočil, Jan, Hospodková, Alice, Petříček, Otto, Pangrác, Jiří, Zíková, Markéta, Oswald, Jiří, Vetushka, Aliaksei

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.01 MB

english, 2016

19

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8µm

Zíková, Markéta, Hospodková, Alice, Pangrác, Jiří, Oswald, Jiří, Krčil, Pavel, Hulicius, Eduard, Komninou, Philomela, Kioseoglou, Joseph

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 3.42 MB

english, 2015

20

Size and nitrogen inhomogeneity in detonation and laser synthesized primary nanodiamond particles revealed via salt-assisted deaggregation

Stehlik, Stepan, Henych, Jiri, Stenclova, Pavla, Kral, Robert, Zemenova, Petra, Pangrac, Jiri, Vanek, Ondrej, Kromka, Alexander, Rezek, Bohuslav

Journal:

Year:

2021

File:

PDF, 568 KB

2021

21

SPIE Proceedings [SPIE Fourth Conference on Sensors, MEMS and Electro-Optic Systems - Skukuza, Kruger National Park, South Africa (Monday 12 September 2016)] Fourth Conference on Sensors, MEMS, and Electro-Optic Systems - Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

du Plessis, Monuko, Hospodková, Alice, Pangrác, Jiří, Kuldová, Karla, Nikl, Martin, Pacherová, Oliva, Oswald, Jiří, Hubáček, Tomáš, Zíková, Markéta, Brůža, Petr, Pánek, Dalibor, Blažek, Karel, Ledoux,

Year:

2017

Language:

english

File:

PDF, 1.58 MB

english, 2017

22

Vapour pressure and heat capacities of metal organic precursors, Y(thd)3 and Zr(thd)4

Michal Fulem, Květoslav Růžička, Vlastimil Růžička, Tomislav Šimeček, Eduard Hulicius, Jiřı́ Pangrác

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 370 KB

english, 2004

23

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Hospodková, Alice, Pangrác, Jiří, Zíková, Markéta, Oswald, Jiří, Vyskočil, Jan, Komninou, Philomela, Kioseoglou, Joseph, Florini, Nikoleta, Hulicius, Eduard

Journal:

Applied Surface Science

Year:

2014

Language:

english

File:

PDF, 1.75 MB

english, 2014

24

SPIE Proceedings [SPIE SPIE NanoScience + Engineering - San Diego, California, United States (Sunday 17 August 2014)] Nanophotonic Materials XI - Type-I InAs quantum dots covered by GaAsSb strain reducing layer

Cabrini, Stefano, Lérondel, Gilles, Schwartzberg, Adam M., Mokari, Taleb, Pokorný, Martin, Kozák, Martin, Trojánek, František, Pangrác, Jiří, Hospodková, Alice

Year:

2014

Language:

english

File:

PDF, 989 KB

english, 2014

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